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Deterministic laser-writing of nitrogen-vacancy centres in high purity diamond

Abstract:
We report the deterministic writing of single nitrogen-vacancy defects in commercially available high purity diamond using only laser processing. The positioning accuracy of the single defects is around 250 nm and about 20% of the written defects display near transform-limited optical transitions at a temperature of 5 K. The results represent a significant step towards defect-engineered devices using colour centres as coherent spin-photon interfaces for quantum technologies, and shed light on the physical mechanism for laser-induced vacancy diffusion in diamond.
Publication status:
Published
Peer review status:
Peer reviewed

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Publisher copy:
10.1088/2633-4356/ae1c14

Authors

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Institution:
University of Oxford
Role:
Author
More by this author
Institution:
University of Oxford
Division:
SSD
Department:
International Development
Sub department:
Refugee Studies Centre
Role:
Author
ORCID:
0009-0005-3892-3809
More by this author
Role:
Author
ORCID:
0000-0003-1734-3571
More by this author
Institution:
University of Oxford
Division:
SSD
Department:
International Development
Sub department:
Refugee Studies Centre
Role:
Author
ORCID:
0000-0003-4302-4101
More by this author
Role:
Author
ORCID:
0000-0002-8760-6907



Publisher:
IOP Publishing
Journal:
Materials for Quantum Technology More from this journal
Volume:
5
Issue:
4
Article number:
041002
Publication date:
2025-11-21
Acceptance date:
2025-11-05
DOI:
EISSN:
2633-4356
ISSN:
2633-4356


Language:
English
Keywords:
Pubs id:
2338382
UUID:
uuid_beb58e00-2e37-45dd-ac6d-48a638195301
Local pid:
pubs:2338382
Source identifiers:
3494847
Deposit date:
2025-11-21
ARK identifier:

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