Journal article
Carrier confinement effects of InxGa1-xN/GaN multi quantum disks with GaN surface barriers grown in GaN nanorods
- Abstract:
- Structural and optical properties of In x Ga 1-x N/GaN multi quantum disks (QDisks) grown on GaN nanorods by molecular beam epitaxy have been investigated by transmission electron microscopy and micro-photoluminescence (PL) spectroscopy. Two types of InGaN QDisks were grown: a pseudo-3D confined InGaN pillar-type QDisks embedded in GaN nanorods; and QDisks in flanged cone type GaN nanorods. The PL emission peak and excitation dependent PL behavior of the pillar-type Qdisks differ greatly from those of the flanged cone type QDisks. Time resolved PL was carried out to probe the differences in charge carrier dynamics. The results suggest that by constraining the formation of InGaN QDisks within the centre of the nanorod, carriers are restricted from migrating to the surface, decreasing the surface recombination at high carrier densities.
- Publication status:
- Published
- Peer review status:
- Peer reviewed
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- Files:
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(Preview, Accepted manuscript, pdf, 644.8KB, Terms of use)
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- Publisher copy:
- 10.1016/j.optmat.2018.02.052
Authors
- Publisher:
- Elsevier
- Journal:
- Optical Materials More from this journal
- Volume:
- 78
- Pages:
- 365-369
- Publication date:
- 2018-03-18
- Acceptance date:
- 2018-02-25
- DOI:
- EISSN:
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1873-1252
- ISSN:
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0925-3467
- Keywords:
- Pubs id:
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pubs:828913
- UUID:
-
uuid:bafdd54b-11d5-4711-81fd-478166ef73cd
- Local pid:
-
pubs:828913
- Source identifiers:
-
828913
- Deposit date:
-
2018-06-21
Terms of use
- Copyright holder:
- Elsevier BV
- Copyright date:
- 2018
- Notes:
- © 2018 Elsevier B.V. All rights reserved. This is the accepted manuscript version of the article. The final version is available online from Elsevier at: https://doi.org/10.1016/j.optmat.2018.02.052
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