Investigation of the growth of In2O3 on Y-stabilized ZrO2(100) by oxygen plasma assisted molecular beam epitaxy

Journal article

Thin films of In2O3 have been grown on Y-stabilised ZrO2(100) substrates by oxygen plasma assisted molecular beam epitaxy over a range of substrate temperatures between 650 °C and 900 °C. Growth at 650 °C leads to continuous but granular films and complete extinction of substrate core level structure in X-ray photoelectron spectroscopy. However with increasing substrate temperature the films break up into a series of discrete micrometer sized islands. Both the continuous and the island films have excellent epitaxial relationship with the substrate as gauged by X-ray diffraction and selected area electron diffraction and lattice imaging in high resolution transmission electron microscopy. © 2008 Elsevier B.V. All rights reserved.

Authors: Bourlange, A; Payne, D; Palgrave, R; Foord, J; Egdell, R

• Publication status: Published
• Journal: THIN SOLID FILMS
• Volume: 517
• Issue: 15
• Pages: 4286-4294
• Publication date: 2009-06-01
• DOI: 10.1016/j.tsf.2008.11.134
• ISSN: 0040-6090
• Language: English
• Keywords: Indium oxide; High resolution transmission electron microscopy; X-ray photoelectron spectroscopy; Molecular beam epitaxy; Atomic force microscopy