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Investigation of the growth of In2O3 on Y-stabilized ZrO2(100) by oxygen plasma assisted molecular beam epitaxy

Abstract:

Thin films of In2O3 have been grown on Y-stabilised ZrO2(100) substrates by oxygen plasma assisted molecular beam epitaxy over a range of substrate temperatures between 650 °C and 900 °C. Growth at 650 °C leads to continuous but granular films and complete extinction of substrate core level structure in X-ray photoelectron spectroscopy. However with increasing substrate temperature the films break up into a series of discrete micrometer sized islands. Both the continuous and the island films ...

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Publication status:
Published

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Publisher copy:
10.1016/j.tsf.2008.11.134

Authors


Bourlange, A More by this author
Palgrave, RG More by this author
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Institution:
University of Oxford
Department:
Oxford, MPLS, Chemistry, Physical and Theoretical Chem
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Institution:
University of Oxford
Department:
Oxford, MPLS, Chemistry, Inorganic Chemistry
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Journal:
THIN SOLID FILMS
Volume:
517
Issue:
15
Pages:
4286-4294
Publication date:
2009-06-01
DOI:
ISSN:
0040-6090
URN:
uuid:ba8f354a-1ab9-47b3-bfe8-11b7481dc8f8
Source identifiers:
9469
Local pid:
pubs:9469

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