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A New Topological Insulator Built From Quasi One-Dimensional Atomic Ribbons

Abstract:
A novel topological insulator with orthorhombic crystal structure is demonstrated. It is characterized by quasi one-dimensional, conducting atomic chains instead of the layered, two-dimensional sheets known from the established Bi2(Se,Te)3 system. The Sb-doped Bi2Se3 nanowires are grown in a TiO2-catalyzed process by chemical vapor deposition. The binary Bi2Se3 is transformed from rhombohedral to orthorhombic by substituting Sb on ~38% of the Bi sites. Pure Sb2Se3 is a topologically trivial band insulator with an orthorhombic crystal structure at ambient conditions, and it is known to transform into a topological insulator at high pressure. Angle-resolved photoemission spectroscopy shows a topological surface state, while Sb doping also tunes the Fermi level to reside in the bandgap.
Publication status:
Published
Peer review status:
Peer reviewed

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Publisher copy:
10.1002/pssr.201409518

Authors


More by this author
Institution:
University of Oxford
Division:
MPLS
Department:
Physics
Role:
Author
More by this author
Institution:
University of Oxford
Division:
MPLS
Department:
Physics
Role:
Author


Publisher:
Wiley
Journal:
Physica Status Solidi - Rapid Research Letters More from this journal
Volume:
9
Issue:
2
Pages:
130–135
Publication date:
2015-02-01
DOI:
EISSN:
1862-6270
ISSN:
1862-6254


Keywords:
UUID:
uuid:ba8ddcf3-ce46-40ef-a027-244ee1f49784
Local pid:
pubs:492349
Source identifiers:
492349
Deposit date:
2015-03-14

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