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Molecular doping for control of gate bias stress in organic thin film transistors

Abstract:

The key active devices of future organic electronic circuits are organic thin film transistors (OTFTs). Reliability of OTFTs remains one of the most challenging obstacles to be overcome for broad commercial applications. In particular, bias stress was identified as the key instability under operation for numerous OTFT devices and interfaces. Despite a multitude of experimental observations, a comprehensive mechanism describing this behavior is still missing. Furthermore, controlled methods to...

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Publication status:
Published
Peer review status:
Peer reviewed
Version:
Publisher's version

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Publisher copy:
10.1063/1.4861168

Authors


Zakhidov, AA More by this author
Lüssem, B More by this author
Jankowski, J More by this author
Tietze, ML More by this author
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Center for Advancing Electronics Dresden More from this funder
Publisher:
AIP Publishing LLC Publisher's website
Journal:
Applied Physics Letters Journal website
Volume:
104
Issue:
1
Pages:
Article: 013507
Publication date:
2014-01-06
DOI:
EISSN:
1077-3118
ISSN:
0003-6951
URN:
uuid:ba5366a2-214f-4491-91f0-00af27e3c722
Source identifiers:
448301
Local pid:
pubs:448301
Language:
English

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