Journal article

THE ELECTRONIC-PROPERTIES OF DISLOCATIONS IN SILICON

Publication status:: Published

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APA Style

Wilshaw, P., & Fell, T. (1989). THE ELECTRONIC-PROPERTIES OF DISLOCATIONS IN SILICON. INSTITUTE OF PHYSICS CONFERENCE SERIES, 104, 85–96.

MLA Style

Wilshaw, P., and T. Fell. “THE ELECTRONIC-PROPERTIES OF DISLOCATIONS IN SILICON.” INSTITUTE OF PHYSICS CONFERENCE SERIES, no. 104, 1989, pp. 85–96.

Chicago Style

Wilshaw, P, and T Fell. 1989. “THE ELECTRONIC-PROPERTIES OF DISLOCATIONS IN SILICON.” INSTITUTE OF PHYSICS CONFERENCE SERIES, no. 104: 85–96.
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Authors

+ Wilshaw, P More by this author

Role:: Author

+ Fell, T More by this author

Role:: Author

Journal:: INSTITUTE OF PHYSICS CONFERENCE SERIES More from this journal
Issue:: 104
Pages:: 85-96
Publication date:: 1989-01-01
ISSN:: 0951-3248

Pubs id:: pubs:25043
UUID:: uuid:b97051fa-448a-4f88-a3e9-d7eae41a4d89
Local pid:: pubs:25043
Source identifiers:: 25043
Deposit date:: 2012-12-19

Terms of use

Copyright date:: 1989

Licence:: Terms and Conditions of Use for Oxford University Research Archive

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