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Structural evolution and the role of dislocations in InGaAs island formation on GaAs (110) and (111)B surfaces

Publication status:: Published

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APA Style

Lobo, C., Leon, R., Liao, Z., Stevens-Kalceff, M., & Cockayne, D. (1998). Structural evolution and the role of dislocations in InGaAs island formation on GaAs (110) and (111)B surfaces. 363–364.

MLA Style

Lobo, C., et al. Structural Evolution and the Role of Dislocations in InGaAs Island Formation on GaAs (110) and (111)B Surfaces. 1998, pp. 363–64.

Chicago Style

Lobo, C, R Leon, Z Liao, M Stevens-Kalceff, and D Cockayne. 1998. “Structural Evolution and the Role of Dislocations in InGaAs Island Formation on GaAs (110) and (111)B Surfaces.” In , 363–64.
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Authors

+ Lobo, C More by this author

Role:: Author

+ Leon, R More by this author

Role:: Author

+ Liao, Z More by this author

Role:: Author

+ Stevens-Kalceff, M More by this author

Role:: Author

+ Cockayne, D More by this author

Role:: Author

Journal:: ELECTRON MICROSCOPY 1998, VOL 3 More from this journal
Pages:: 363-364
Publication date:: 1998-01-01
Event title:: 14th International Congress on Electron Microscopy
ISBN:: 0750305665

Pubs id:: pubs:3220
UUID:: uuid:b86f2f29-6a8d-41f8-b106-d68437527bc1
Local pid:: pubs:3220
Source identifiers:: 3220
Deposit date:: 2012-12-19

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Copyright date:: 1998

Licence:: Terms and Conditions of Use for Oxford University Research Archive

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