Journal article icon

Journal article

Near-strain-free GaN/AlGaN narrow line width UV light emission with very stable wavelength on excitation power by using superlattices

Abstract:

Because of the strong strain in nitrides, superlattice layers have been used to release the strain in the QW and reduce the quantum confined Stark effect. However, few reports discuss comprehensively the strain relaxation behavior and optical performance of a GaN/AlGaN single quantum well (QW) with inserted GaN/AlGaN superlattices (SLs). In this work, we examined a group of graded Al content GaN/AlxGa1–xN SL layers under the GaN/Al0.3

Expand abstract
Publication status:
Published
Peer review status:
Peer reviewed

Actions


Access Document


Files:
Publisher copy:
10.1021/acsaelm.9b00813

Authors


More by this author
Role:
Author
ORCID:
0000-0001-8413-2497
More by this author
Role:
Author
ORCID:
0000-0002-7785-1968
Publisher:
American Chemical Society
Journal:
ACS Applied Electronic Materials More from this journal
Volume:
2
Issue:
2
Pages:
571-579
Publication date:
2020-02-03
Acceptance date:
2020-02-03
DOI:
ISSN:
2637-6113
Language:
English
Keywords:
Pubs id:
1087433
Local pid:
pubs:1087433
Deposit date:
2020-02-14

Terms of use


Views and Downloads






If you are the owner of this record, you can report an update to it here: Report update to this record

TO TOP