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Nucleation, growth and size distributions of Ge islands on Si(001): in-situ STM studies

Abstract:
Heteroepitaxial Ge/Si(001) growth has been investigated using in-situ scanning tunneling microscopy. Once the mismatch strain exceeds a critical value it is relieved either by the formation of coherent three-dimensional islands or pits, depending upon growth dependence of growth rate. Although late-stage island growth is often attributed to Ostwald ripening, in the case of Ge/Si(001), due to the energy barrier at the island base, other growth mechanisms are found to dominate at temperatures below 700 K.
Publication status:
Published

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Journal:
MICROSCOPY OF SEMICONDUCTING MATERIALS 1997 More from this journal
Issue:
157
Pages:
597-600
Publication date:
1997-01-01
Event title:
Royal-Microscopical-Society Conference on Microscopy of Semiconducting Materials
ISSN:
0951-3248
ISBN:
0750304642
Keywords:
Pubs id:
pubs:23172
UUID:
uuid:b60ba5d0-f5b8-4939-83a3-30ffd3e3b13e
Local pid:
pubs:23172
Source identifiers:
23172
Deposit date:
2012-12-19

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