Conference item

Nucleation, growth and size distributions of Ge islands on Si(001): in-situ STM studies

Abstract:: Heteroepitaxial Ge/Si(001) growth has been investigated using in-situ scanning tunneling microscopy. Once the mismatch strain exceeds a critical value it is relieved either by the formation of coherent three-dimensional islands or pits, depending upon growth dependence of growth rate. Although late-stage island growth is often attributed to Ostwald ripening, in the case of Ge/Si(001), due to the energy barrier at the island base, other growth mechanisms are found to dominate at temperatures below 700 K.

Publication status:: Published

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APA Style

Goldfarb, I., Owen, J., Hayden, P., Miki, K., & Briggs, G. (1997). Nucleation, growth and size distributions of Ge islands on Si(001): in-situ STM studies. 157, 597–600.

MLA Style

Goldfarb, I., et al. Nucleation, Growth and Size Distributions of Ge Islands on Si(001): in-Situ STM Studies. no. 157, 1997, pp. 597–600.

Chicago Style

Goldfarb, I, J Owen, P Hayden, K Miki, and G Briggs. 1997. “Nucleation, Growth and Size Distributions of Ge Islands on Si(001): in-Situ STM Studies.” In , 597–600.
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+ Goldfarb, I More by this author

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+ Owen, J More by this author

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+ Hayden, P More by this author

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+ Miki, K More by this author

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+ Briggs, G More by this author

Role:: Author

Journal:: MICROSCOPY OF SEMICONDUCTING MATERIALS 1997 More from this journal
Issue:: 157
Pages:: 597-600
Publication date:: 1997-01-01
Event title:: Royal-Microscopical-Society Conference on Microscopy of Semiconducting Materials
ISSN:: 0951-3248
ISBN:: 0750304642

Keywords:: STRAIN

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Pubs id:: pubs:23172
UUID:: uuid:b60ba5d0-f5b8-4939-83a3-30ffd3e3b13e
Local pid:: pubs:23172
Source identifiers:: 23172
Deposit date:: 2012-12-19

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Copyright date:: 1997

Licence:: Terms and Conditions of Use for Oxford University Research Archive

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