Stranski-Krastanov growth of InN nanostructures on GaN studied by RHEED, STM and AFM

Conference item

The growth of self-assembled InN nanostructures on GaN by MBE has been studied using two different nitrogen sources. Stranski-Krastanov growth may be achieved but is highly sensitive to the V: III ratio as well as coverage and temperature. The size and shape of the resultant nanostructures depend on the nitrogen source used. Using thermally cracked ammonia, Stranski-Krastanov growth occurred only for thin layers (up to 8 monolayers) at high V: III ratios, as observed by RHEED and AIM. The sensitivity of the growth to the V: III ratio may be explained in terms of the interplay between equilibrium thermodynamics and growth kinetics. Similar experiments at higher V:III ratios were performed using a modified nitrogen plasma source. Stranski-Krastanov growth occurred and was observed in-situ by RHEED. The as-grown nanostructures were imaged in-vacuo by elevated-temperature STM, showing the dependence of island size and distribution on the InN coverage.

Authors: Norenberg, C; Oliver, R; Martin, MG; Allers, L; Castell, M

• Publication status: Published
• Journal: PHYSICA STATUS SOLIDI A-APPLIED RESEARCH
• Volume: 194
• Issue: 2
• Pages: 536-540
• Publication date: 2002-12-16
• Event title: International Workshop on Nitride Semiconductors
• DOI: 10.1002/1521-396X(200212)194:2<536::AID-PSSA536>3.0.CO;2-B
• EISSN: 1521-396X
• ISSN: 0031-8965
• Keywords: SUBSTRATE; QUANTUM DOTS