Conference item
TED, TEM and AFM studies comparing atomic ordering in InAsySb1-y layers grown by MOVPE and MBE
- Abstract:
- CuPt-type atomic ordering in InAsySb1-y layers grown by molecular beam epitaxy (MBE) and metal organic vapour phase epitaxy (MOVPE) on (001) substrates was investigated using TED and TEM. The degree of ordering was greater and occurred at higher temperatures, and the ordered domains were larger, in the MOVPE layers compared with the MBE layers. AFM showed surface ridges along the [110] direction for the MOVPE layers and along the [<(1)over bar 10>] direction for the M-BE layers. We suggest mechanisms to explain why the differences in ordering for the MOVPE and MBE layers occur.
- Publication status:
- Published
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- Journal:
- MICROSCOPY OF SEMICONDUCTING MATERIALS 1997 More from this journal
- Issue:
- 157
- Pages:
- 279-282
- Publication date:
- 1997-01-01
- Event title:
- Royal-Microscopical-Society Conference on Microscopy of Semiconducting Materials
- ISSN:
-
0951-3248
- ISBN:
- 0750304642
- Pubs id:
-
pubs:7217
- UUID:
-
uuid:ae4dffff-6c13-4c3a-836a-60fbba0124c2
- Local pid:
-
pubs:7217
- Source identifiers:
-
7217
- Deposit date:
-
2012-12-19
- ARK identifier:
Terms of use
- Copyright date:
- 1997
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