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TED, TEM and AFM studies comparing atomic ordering in InAsySb1-y layers grown by MOVPE and MBE

Abstract:
CuPt-type atomic ordering in InAsySb1-y layers grown by molecular beam epitaxy (MBE) and metal organic vapour phase epitaxy (MOVPE) on (001) substrates was investigated using TED and TEM. The degree of ordering was greater and occurred at higher temperatures, and the ordered domains were larger, in the MOVPE layers compared with the MBE layers. AFM showed surface ridges along the [110] direction for the MOVPE layers and along the [<(1)over bar 10>] direction for the M-BE layers. We suggest mechanisms to explain why the differences in ordering for the MOVPE and MBE layers occur.
Publication status:
Published

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Journal:
MICROSCOPY OF SEMICONDUCTING MATERIALS 1997 More from this journal
Issue:
157
Pages:
279-282
Publication date:
1997-01-01
Event title:
Royal-Microscopical-Society Conference on Microscopy of Semiconducting Materials
ISSN:
0951-3248
ISBN:
0750304642


Pubs id:
pubs:7217
UUID:
uuid:ae4dffff-6c13-4c3a-836a-60fbba0124c2
Local pid:
pubs:7217
Source identifiers:
7217
Deposit date:
2012-12-19
ARK identifier:

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