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Dependence of surface facet period on the diameter of nanowires.

Abstract:

Axial heterostructured silicon nanowires with varying n- and p-doping were synthesized using a vapor-liquid-solid approach. The nanowire sidewalls exhibit periodic nanofaceting in the silicon deposited directly on the sidewalls when diborane dopant gas is introduced during growth. For such nanofaceting, a model predicting the distance between facets (the facet period) is developed. For a nanowire structure, an extra energy cost term arising from the formation of apexes between facets is consi...

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Publication status:
Published

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Publisher copy:
10.1021/nn901428u

Authors


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Institution:
University of Oxford
Division:
MPLS
Department:
Materials
Role:
Author
Journal:
ACS nano More from this journal
Volume:
4
Issue:
2
Pages:
632-636
Publication date:
2010-02-01
DOI:
EISSN:
1936-086X
ISSN:
1936-0851
Language:
English
Keywords:
Pubs id:
pubs:48455
UUID:
uuid:ab3a9caf-5a34-4f68-ba46-9f355cc47179
Local pid:
pubs:48455
Source identifiers:
48455
Deposit date:
2012-12-19

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