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Thermally induced dynamics of dislocations in graphene at atomic resolution.

Abstract:

Thermally induced dislocation movements are important in understanding the effects of high temperature annealing on modifying the crystal structure. We use an in-situ heating holder in an aberration corrected transmission electron microscopy to study the movement of dislocations in suspended monolayer graphene up to 800°C. Control of temperature enables the differentiation of electron beam induced effects and thermally driven processes. At room temperature the dynamics of dislocation behavior...

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Publication status:
Published
Peer review status:
Peer reviewed

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Publisher copy:
10.1021/acsnano.5b05355

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Institution:
University of Oxford
Division:
MPLS
Department:
Materials
Role:
Author
More by this author
Institution:
University of Oxford
Division:
MPLS
Department:
Materials
Role:
Author
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Name:
Supercomputing Center/Korea Institute of Science
Grant:
KSC-2014-C3-009
More from this funder
Name:
National Research Foundation of Korea
Grant:
RIAM No. 2010-0012670
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Name:
Royal Society
Funding agency for:
Warner, J
More from this funder
Name:
Seventh Framework Programme
Funding agency for:
Allen, C
More from this funder
Name:
Clarendon Fund
Funding agency for:
Gong, C
Publisher:
American Chemical Society
Journal:
ACS Nano More from this journal
Volume:
9
Issue:
10
Pages:
10066-10075
Publication date:
2015-10-13
Acceptance date:
2015-10-08
DOI:
EISSN:
1936-086X
ISSN:
1936-0851
Language:
English
Keywords:
Pubs id:
pubs:575120
UUID:
uuid:aa36342a-62ca-4aec-9741-3dfcd48b9895
Local pid:
pubs:575120
Source identifiers:
575120
Deposit date:
2016-05-16

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