Journal article
High electron mobility and insights into temperature-dependent scattering mechanisms in InAsSb nanowires
- Abstract:
- InAsSb nanowires are promising elements for thermoelectric devices, infrared photodetectors, high-speed transistors, as well as thermophotovoltaic cells. By changing the Sb alloy fraction the mid-infrared bandgap energy and thermal conductivity may be tuned for specific device applications. Using both terahertz and Raman noncontact probes, we show that Sb alloying increases the electron mobility in the nanowires by over a factor of 3 from InAs to InAs0.65Sb0.35. We also extract the temperature-dependent electron mobility via both terahertz and Raman spectroscopy, and we report the highest electron mobilities for InAs0.65Sb0.35 nanowires to date, exceeding 16,000 cm2 V–1 s–1 at 10 K.
- Publication status:
- Published
- Peer review status:
- Peer reviewed
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- Files:
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(Preview, Accepted manuscript, pdf, 16.5MB, Terms of use)
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- Publisher copy:
- 10.1021/acs.nanolett.8b00842
Authors
- Publisher:
- American Chemical Society
- Journal:
- Nano Letters More from this journal
- Volume:
- 18
- Issue:
- 6
- Pages:
- 3703–3710
- Publication date:
- 2018-05-02
- Acceptance date:
- 2018-05-02
- DOI:
- ISSN:
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1530-6984
- Keywords:
- Pubs id:
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pubs:845077
- UUID:
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uuid:a9dabd02-be96-4f0d-8f7d-690b56ea69d2
- Local pid:
-
pubs:845077
- Source identifiers:
-
845077
- Deposit date:
-
2018-05-02
Terms of use
- Copyright holder:
- American Chemical Society
- Copyright date:
- 2018
- Notes:
- Copyright © 2018 American Chemical Society. This is the accepted manuscript version of the article. The final version is available online from American Chemical Society at: https://doi.org/10.1021/acs.nanolett.8b00842
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