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High electron mobility and insights into temperature-dependent scattering mechanisms in InAsSb nanowires

Abstract:

InAsSb nanowires are promising elements for thermoelectric devices, infrared photodetectors, high-speed transistors, as well as thermophotovoltaic cells. By changing the Sb alloy fraction the mid-infrared bandgap energy and thermal conductivity may be tuned for specific device applications. Using both terahertz and Raman noncontact probes, we show that Sb alloying increases the electron mobility in the nanowires by over a factor of 3 from InAs to InAs0.65Sb0.35. We also extract the temperatur...

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Publication status:
Published
Peer review status:
Peer reviewed
Version:
Accepted Manuscript

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Publisher copy:
10.1021/acs.nanolett.8b00842

Authors


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Institution:
University of Oxford
Division:
MPLS Division
Department:
Physics; Condensed Matter Physics
Amaduzzi, F More by this author
More by this author
Institution:
University of Oxford
Division:
MPLS Division
Department:
Physics; Condensed Matter Physics
More by this author
Institution:
University of Oxford
Division:
MPLS Division
Department:
Physics; Condensed Matter Physics
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Publisher:
American Chemical Society Publisher's website
Journal:
Nano Letters Journal website
Volume:
18
Issue:
6
Pages:
3703–3710
Publication date:
2018-05-02
Acceptance date:
2018-05-02
DOI:
ISSN:
1530-6984
Pubs id:
pubs:845077
URN:
uri:a9dabd02-be96-4f0d-8f7d-690b56ea69d2
UUID:
uuid:a9dabd02-be96-4f0d-8f7d-690b56ea69d2
Local pid:
pubs:845077

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