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Oxygen transport in Czochralski silicon investigated by dislocation locking experiments

Abstract:

Dislocation locking has been investigated in Czochralski silicon with different oxygen concentrations in the 350-850 °C temperature range. Specimens containing well-defined arrays of dislocation half-loops are subjected to isothermal anneals of controlled duration, during which oxygen diffuses to the dislocations. The stress required to bring about dislocation motion is then measured at 550 °C. The dislocation unlocking stress as a function of annealing time is found to obey distinct regimes....

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Publisher copy:
10.1016/j.mseb.2006.06.045

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Institution:
University of Oxford
Department:
Oxford, MPLS, Materials
Role:
Author
Journal:
Materials Science and Engineering B: Solid-State Materials for Advanced Technology
Volume:
134
Issue:
2-3 SPEC. ISS.
Pages:
176-184
Publication date:
2006-10-15
DOI:
ISSN:
0921-5107
URN:
uuid:a783532c-106b-47a9-a066-36042fde0efe
Source identifiers:
176461
Local pid:
pubs:176461
Language:
English
Keywords:

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