Journal article
Oxygen transport in Czochralski silicon investigated by dislocation locking experiments
- Abstract:
-
Dislocation locking has been investigated in Czochralski silicon with different oxygen concentrations in the 350-850 °C temperature range. Specimens containing well-defined arrays of dislocation half-loops are subjected to isothermal anneals of controlled duration, during which oxygen diffuses to the dislocations. The stress required to bring about dislocation motion is then measured at 550 °C. The dislocation unlocking stress as a function of annealing time is found to obey distinct regimes....
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- Publisher copy:
- 10.1016/j.mseb.2006.06.045
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Bibliographic Details
- Journal:
- Materials Science and Engineering B: Solid-State Materials for Advanced Technology
- Volume:
- 134
- Issue:
- 2-3 SPEC. ISS.
- Pages:
- 176-184
- Publication date:
- 2006-10-15
- DOI:
- ISSN:
-
0921-5107
- Source identifiers:
-
176461
Item Description
Terms of use
- Copyright date:
- 2006
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