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Increased photoconductivity lifetimes in GaAs nanowires via n-type and p-type shell doping

Abstract:

Reliable doping in GaAs nanowires is essential for the development of novel optoelectronic devices. Previously, GaAs nanowires have been shown to exhibit extremely short photoconductivity lifetimes of a few picoseconds due to their high surface recombination velocity, which is detrimental for nanowire devices, such as solar cells and nanowire lasers. Here, we show that, by exploiting engineered band-bending via selective doping, this parasitic surface recombination can be reduced. We utilise ...

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Publication status:
Published
Peer review status:
Peer reviewed
Version:
Accepted Manuscript

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Publisher copy:
10.1109/IRMMW-THz.2016.7758574

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Department:
Oxford, MPLS, Physics, Condensed Matter Physics
Casadei, A More by this author
Tutuncouglu, G More by this author
Matteini, F More by this author
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Publisher:
IEEE Publisher's website
Volume:
2016-November
Publication date:
2016-11-28
DOI:
ISSN:
2162-2027 and 2162-2035
Pubs id:
pubs:668088
URN:
uri:a540eeb3-c2ef-4c8a-8c5f-fcd5f0e4ff77
UUID:
uuid:a540eeb3-c2ef-4c8a-8c5f-fcd5f0e4ff77
Local pid:
pubs:668088
ISBN:
9781467384858

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