Conference item

Polycrystalline silicon field emitters

Abstract:: Field emission of electrons from polycrystalline silicon tips has been investigated. Two process routes, wet and dry etching, were used to form the tips and their structures were compared using a transmission electron microscope (TEM). TEM micrographs of the wet-etched polysilicon tips show the presence of many individual grains at the emitter tip. Field emission current-voltage data was collected from the wet-etched polycrystalline emitter tips immediately after etching and after oxidation-sharpening. This data was then compared with that collected from single crystal silicon emitters.

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APA Style

Boswell, E., Huq, S. E., Huang, M., Prewett, P., & Wilshaw, P. (1995). Polycrystalline silicon field emitters. 181–185.

MLA Style

Boswell, E, et al. “Polycrystalline Silicon Field Emitters.” 1995, pp. 181–85.

Chicago Style

Boswell, E, SE Huq, M Huang, P Prewett, and P Wilshaw. 1995. “Polycrystalline Silicon Field Emitters.” 181–85.
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Authors

+ Boswell, E More by this author

Role:: Author

+ Huq, SE More by this author

Role:: Author

+ Huang, M More by this author

Role:: Author

+ Prewett, P More by this author

Role:: Author

+ Wilshaw, P More by this author

Institution:: University of Oxford
Division:: MPLS
Department:: Materials
Role:: Author

Publisher:: IEEE
Host title:: Proceedings of the IEEE International Vacuum Microelectronics Conference, IVMC
Pages:: 181-185
Publication date:: 1995-01-01

Pubs id:: pubs:502428
UUID:: uuid:a3c0e585-f5ab-48c3-a1a2-b6f0604e6190
Local pid:: pubs:502428
Source identifiers:: 502428
Deposit date:: 2015-01-15
ARK identifier:: ark:/29072/ora_a3c0e585f5ab48c3a1a2b6f0604e6190

Terms of use

Copyright date:: 1995

Licence:: Terms and Conditions of Use for Oxford University Research Archive

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