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Polycrystalline silicon field emitters

Abstract:

Field emission of electrons from polycrystalline silicon tips has been investigated. Two process routes, wet and dry etching, were used to form the tips and their structures were compared using a transmission electron microscope (TEM). TEM micrographs of the wet-etched polysilicon tips show the presence of many individual grains at the emitter tip. Field emission current-voltage data was collected from the wet-etched polycrystalline emitter tips immediately after etching and after oxidation-s...

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Authors


Boswell, EC More by this author
Prewett, PD More by this author
More by this author
Institution:
University of Oxford
Department:
Oxford, MPLS, Materials
Publisher:
IEEE
Pages:
181-185
Publication date:
1995
URN:
uuid:a3c0e585-f5ab-48c3-a1a2-b6f0604e6190
Source identifiers:
502428
Local pid:
pubs:502428

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