Journal article
Pentacene homojunctions: Electron and hole transport properties and related photovoltaic responses
- Abstract:
- We report on organic p-i-n homojunctions composed of differently doped vacuum-deposited pentacene layers. We observe a remarkably high built-in voltage of 1.65 V. An analysis of the current-voltage characteristics under dark and illuminated conditions reveals that the open-circuit voltage is directly related to the built-in voltage and that the recombination process is influenced by the distinct charge transport properties of electrons and holes in the pentacene film. By a comparison with p-i-p and n-i-n single-carrier homojunctions, deep trap states located around 0.63 eV below the electron transport level are shown to influence the properties. © 2008 The American Physical Society.
- Publication status:
- Published
- Peer review status:
- Peer reviewed
Actions
Authors
+ Basic Energy Sciences, Office of Science, U.S. Department of Energy
More from this funder
- Grant:
- DE-FG02-04ER15591
- Publisher:
- American Physical Society
- Journal:
- Physical Review B - Condensed Matter and Materials Physics More from this journal
- Volume:
- 77
- Issue:
- 19
- Publication date:
- 2008-05-28
- DOI:
- EISSN:
-
1550-235X
- ISSN:
-
1098-0121
- Language:
-
English
- Pubs id:
-
pubs:405427
- UUID:
-
uuid:a3b69425-62da-42c4-aaa3-ecc92583073c
- Local pid:
-
pubs:405427
- Source identifiers:
-
405427
- Deposit date:
-
2013-09-26
Terms of use
- Copyright holder:
- American Physical Society
- Copyright date:
- 2008
- Notes:
- © 2008 The American Physical Society. The full text of this article is not available in ORA. You may be able to access the article via the publisher copy link above.
If you are the owner of this record, you can report an update to it here: Report update to this record