Journal article icon

Journal article

Exceptional surface passivation arising from bis(trifluoromethanesulfonyl)-based solutions

Abstract:
The surface properties of many inorganic electronic materials (e.g., MoS2, WSe2, Si) can be substantially modified by treatment with the superacid bis(trifluoromethane)sulfonimide (TFSI). Here we find more generally that solutions based on molecules with trifluoromethanesulfonyl groups, including TFSI, give rise to excellent room temperature surface passivation, with the common factor being the presence of CF3SO2 groups and not the solution’s acidity. The mechanism of passivation comprises two effects: (i) chemical passivation; and (ii) field effect passivation from a negatively charged thin film likely to be physically adsorbed by the surface. Degradation of surface passivation is caused by de-adsorption of the thin film from the surface, and occurs slowly in air and rapidly upon vacuum exposure. The air stability of the passivation is enhanced by the presence of droplets at the surface which act to protect the properties of the film. The finding that nonacidic solutions can provide excellent electrical passivation at room temperature opens up the possibility of using them on materials more sensitive to an acidic environment.
Publication status:
Published
Peer review status:
Peer reviewed

Actions

Access Document

Publisher copy:
10.1021/acsaelm.9b00251

Authors

More by this author
Institution:
University of Oxford
Division:
MPLS
Department:
Materials
Role:
Author



Publisher:
American Chemical Society
Journal:
ACS Applied Electronic Materials More from this journal
Volume:
1
Issue:
7
Pages:
1322-1329
Publication date:
2019-06-13
Acceptance date:
2019-06-13
DOI:
EISSN:
2637-6113


Language:
English
Keywords:
Pubs id:
pubs:1037304
UUID:
uuid:a33767e2-60b6-4f89-882b-8358bbbd12da
Local pid:
pubs:1037304
Source identifiers:
1037304
Deposit date:
2019-08-02
ARK identifier:

Terms of use


Views and Downloads






If you are the owner of this record, you can report an update to it here: Report update to this record

TO TOP