Journal article icon

Journal article

Atomistic deformation mechanism of silicon under laser-driven shock compression

Abstract:
Silicon (Si) is one of the most abundant elements on Earth, and it is the most widely used semiconductor. Despite extensive study, some properties of Si, such as its behaviour under dynamic compression, remain elusive. A detailed understanding of Si deformation is crucial for various fields, ranging from planetary science to materials design. Simulations suggest that in Si the shear stress generated during shock compression is released via a high-pressure phase transition, challenging the classical picture of relaxation via defect-mediated plasticity. However, direct evidence supporting either deformation mechanism remains elusive. Here, we use sub-picosecond, highly-monochromatic x-ray diffraction to study (100)-oriented single-crystal Si under laser-driven shock compression. We provide the first unambiguous, time-resolved picture of Si deformation at ultra-high strain rates, demonstrating the predicted shear release via phase transition. Our results resolve the longstanding controversy on silicon deformation and provide direct proof of strain rate-dependent deformation mechanisms in a non-metallic system.
Publication status:
Published
Peer review status:
Peer reviewed

Actions


Access Document


Publisher copy:
10.1038/s41467-022-33220-0

Authors


More by this author
Institution:
University of Oxford
Division:
MPLS
Department:
Physics
Sub department:
Atomic & Laser Physics
Oxford college:
Trinity College
Role:
Author
ORCID:
0000-0003-3055-3223


Publisher:
Springer Nature
Journal:
Nature Communications More from this journal
Volume:
13
Article number:
5535
Publication date:
2022-09-21
Acceptance date:
2022-09-02
DOI:
EISSN:
2041-1723


Language:
English
Keywords:
Pubs id:
1274216
Local pid:
pubs:1274216
Deposit date:
2022-08-15

Terms of use



Views and Downloads






If you are the owner of this record, you can report an update to it here: Report update to this record

TO TOP