- Abstract:
-
Controlled doping of GaAs nanowires is crucial for the development of nanowire-based electronic and optoelectronic devices. Here, we present a non-contact method based on time resolved terahertz photoconductivity for assessing n and p type doping efficiency in nanowires. Using this technique, we measure extrinsic electron and hole concentrations in excess of 10(18)cm(-3) for GaAs nanowires with n-type and p-type doped shells. Furthermore, we show that controlled doping can significantly incre...
Expand abstract - Publication status:
- Published
- Peer review status:
- Peer reviewed
- Version:
- Publisher's version
- Publisher:
- American Chemical Society Publisher's website
- Journal:
- ACS Nano Journal website
- Volume:
- 10
- Issue:
- 4
- Pages:
- 4219–4227
- Publication date:
- 2016-03-09
- DOI:
- EISSN:
-
1936-086X
- ISSN:
-
1936-0851
- URN:
-
uuid:a103f012-3585-4b86-93af-e6747866b08c
- Source identifiers:
-
611678
- Local pid:
- pubs:611678
- Paper number:
- 4
- Language:
- English
- Keywords:
- Copyright holder:
- American Chemical Society
- Copyright date:
- 2016
Journal article
Increased Photoconductivity Lifetime in GaAs Nanowires by Controlled n-Type and p-Type Doping.
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