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Increased Photoconductivity Lifetime in GaAs Nanowires by Controlled n-Type and p-Type Doping.

Abstract:

Controlled doping of GaAs nanowires is crucial for the development of nanowire-based electronic and optoelectronic devices. Here, we present a non-contact method based on time resolved terahertz photoconductivity for assessing n and p type doping efficiency in nanowires. Using this technique, we measure extrinsic electron and hole concentrations in excess of 10(18)cm(-3) for GaAs nanowires with n-type and p-type doped shells. Furthermore, we show that controlled doping can significantly incre...

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Publication status:
Published
Peer review status:
Peer reviewed
Version:
Publisher's version

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Publisher copy:
10.1021/acsnano.5b07579

Authors


Boland, JL More by this author
Casadei, A More by this author
Tutuncuoglu, G More by this author
Matteini, F More by this author
Davies, CL More by this author
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Publisher:
American Chemical Society Publisher's website
Journal:
ACS Nano Journal website
Volume:
10
Issue:
4
Pages:
4219–4227
Publication date:
2016-03-09
DOI:
EISSN:
1936-086X
ISSN:
1936-0851
URN:
uuid:a103f012-3585-4b86-93af-e6747866b08c
Source identifiers:
611678
Local pid:
pubs:611678
Paper number:
4

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