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Polarisation-controlled single photon emission at high temperatures from InGaN quantum dots

Abstract:
Solid-state single photon sources with polarisation control operating beyond the Peltier cooling barrier of 200 K are desirable for a variety of applications in quantum technology. Using a non-polar InGaN system, we report the successful realisation of single photon emission with a g(2)(0) of 0.21, a high polarisation degree of 0.80, a fixed polarisation axis determined by the underlying crystallography, and a GHz repetition rate with a radiative lifetime of 357 ps at 220 K in semiconductor quantum dots. The temperature insensitivity of these properties, together with the simple planar epitaxial growth method and absence of complex device geometries, demonstrates that fast single photon emission with polarisation control can be achieved in solid-state quantum dots above the Peltier temperature threshold, making this system a potential candidate for future on-chip applications in integrated systems.
Publication status:
Published
Peer review status:
Peer reviewed

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Publisher copy:
10.1039/C7NR03391E

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Institution:
University of Oxford
Oxford college:
St Catherine's College
Role:
Author
More by this author
Institution:
University of Oxford
Division:
MPLS
Department:
Physics
Role:
Author
More by this author
Institution:
University of Oxford
Division:
MPLS
Department:
Physics
Role:
Author



Publisher:
Royal Society of Chemistry
Journal:
Nanoscale More from this journal
Volume:
9
Issue:
27
Pages:
9421-9427
Publication date:
2017-06-29
Acceptance date:
2017-06-14
DOI:
EISSN:
2040-3372
ISSN:
2040-3364


Pubs id:
pubs:700464
UUID:
uuid:a0150dff-e02e-4a92-8b3a-3ae44ba6bcea
Local pid:
pubs:700464
Source identifiers:
700464
Deposit date:
2017-06-14

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