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Topographical, compositional, and dopant contrast from cleavage surfaces of GaAs-AlxGa1-xAs superlattices

Abstract:
We present images of (110) cleavage surfaces of GaAs-AlxGa1-xAs superlattices obtained by scanning force microscopy (SFM) and field-emission scanning electron microscopy. Topographical information is mapped by secondary electrons (SEs) and SFM, compositional differences are imaged through SEs and backscattered electrons (BSEs), and information on dopant type is gained through SEs only. Models are presented explaining the contrast observed in each case.
Publication status:
Published

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Institution:
University of Oxford
Department:
Oxford, MPLS, Materials
Perovic, DD More by this author
Ritchie, DA More by this author
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Volume:
146
Pages:
281-284
Publication date:
1995
ISSN:
0951-3248
URN:
uuid:a0052d83-88ac-49e9-a02c-fc3e62e4567a
Source identifiers:
19552
Local pid:
pubs:19552
ISBN:
0-7503-0347-6
Keywords:

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