Conference item
Non-linear direct-laser-write lithography for semiconductor nanowire characterisation
- Abstract:
- A non-linear photolithography technique is presented, providing a new, rapid and damage-free method of contacting semiconductor nanowires. In addition, by using nanowires with room-temperature luminescence, a through-resist photoluminescence step provides a verifiable route to contacting high-quality wires [1]. © 2012 IEEE.
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- Publisher copy:
- 10.1109/COMMAD.2012.6472397
Authors
- Host title:
- Conference on Optoelectronic and Microelectronic Materials and Devices, Proceedings, COMMAD
- Pages:
- 135-136
- Publication date:
- 2012-01-01
- DOI:
- ISBN:
- 9781467330459
- Pubs id:
-
pubs:423475
- UUID:
-
uuid:9e02f468-0af4-4dc3-a579-1d76c5d638f4
- Local pid:
-
pubs:423475
- Source identifiers:
-
423475
- Deposit date:
-
2013-11-16
- ARK identifier:
Terms of use
- Copyright date:
- 2012
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