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Non-linear direct-laser-write lithography for semiconductor nanowire characterisation

Abstract:
A non-linear photolithography technique is presented, providing a new, rapid and damage-free method of contacting semiconductor nanowires. In addition, by using nanowires with room-temperature luminescence, a through-resist photoluminescence step provides a verifiable route to contacting high-quality wires [1]. © 2012 IEEE.

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Publisher copy:
10.1109/COMMAD.2012.6472397

Authors


Parkinson, P More by this author
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Pages:
135-136
Publication date:
2012
DOI:
URN:
uuid:9e02f468-0af4-4dc3-a579-1d76c5d638f4
Source identifiers:
423475
Local pid:
pubs:423475
ISBN:
9781467330459

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