Journal article

GROWTH OF GASB BY MOVPE

Publication status:: Published

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APA Style

Haywood, S., Henriques, A., Mason, N., Nicholas, R., & Walker, P. (1988). GROWTH OF GASB BY MOVPE. SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 3(4), 315–320.

MLA Style

Haywood, S, et al. “GROWTH OF GASB BY MOVPE.” SEMICONDUCTOR SCIENCE AND TECHNOLOGY, vol. 3, no. 4, 1988, pp. 315–20.

Chicago Style

Haywood, S, A Henriques, N Mason, R Nicholas, and P Walker. 1988. “GROWTH OF GASB BY MOVPE.” SEMICONDUCTOR SCIENCE AND TECHNOLOGY 3 (4): 315–20.
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Publisher copy:: 10.1088/0268-1242/3/4/007

Authors

+ Haywood, S More by this author

Role:: Author

+ Henriques, A More by this author

Role:: Author

+ Mason, N More by this author

Role:: Author

+ Nicholas, R More by this author

Role:: Author

+ Walker, P More by this author

Role:: Author

Journal:: SEMICONDUCTOR SCIENCE AND TECHNOLOGY More from this journal
Volume:: 3
Issue:: 4
Pages:: 315-320
Publication date:: 1988-04-01
DOI:: 10.1088/0268-1242/3/4/007
EISSN:: 1361-6641
ISSN:: 0268-1242

Pubs id:: pubs:1665
UUID:: uuid:9a275864-ceb4-414d-8d63-09c690d7cec2
Local pid:: pubs:1665
Source identifiers:: 1665
Deposit date:: 2012-12-19
ARK identifier:: ark:/29072/ora_9a275864ceb4414d8d6309c690d7cec2

Terms of use

Copyright date:: 1988

Licence:: Terms and Conditions of Use for Oxford University Research Archive

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