Conference item icon

Conference item

Radiation hardness studies of VCSELs and PINS for the opto-links of the Atlas SemiConductor Tracker

Abstract:
We study the radiation hardness of the Vertical Cavity Surface Emitting Laser diodes (VCSELs) and the epitaxial silicon PIN diodes that will be used for the Atlas SemiConductor Tracker at the CERN Large Hadron Collider. The tests were conducted with 200 MeV protons to a fluence of 4 x 10(14) p/cm(2) and with 20 MeV (average energy) neutrons to 7.7 x 10(14) n/cm(2). The radiation damage of the VCSELs and PINs and the annealing characteristics are presented. (c) 2007 Elsevier B.V. All rights reserved.
Publication status:
Published

Actions


Access Document


Publisher copy:
10.1016/j.nima.2007.05.298

Authors


More by this author
Institution:
University of Oxford
Division:
MPLS
Department:
Physics
Sub department:
Particle Physics
Role:
Author


Journal:
NUCLEAR INSTRUMENTS and METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT More from this journal
Volume:
579
Issue:
2
Pages:
795-800
Publication date:
2007-09-01
Event title:
6th International Symposium on Development and Application of Semiconductor Tracking Detectors
DOI:
ISSN:
0168-9002


Keywords:
Pubs id:
pubs:12455
UUID:
uuid:97836c1c-2572-4338-a131-758fee097cfa
Local pid:
pubs:12455
Source identifiers:
12455
Deposit date:
2012-12-19

Terms of use



Views and Downloads






If you are the owner of this record, you can report an update to it here: Report update to this record

TO TOP