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Tunable bandgap and spin-orbit coupling by composition control of MoS2 and MoOx (x=2 and 3) thin film compounds

Abstract:
We report on the MoS2 and MoOx (x = 2 and 3) composite thin layers, electrodeposited, onto a Florine doped Tin Oxide (FTO) substrate. Our results show a change in relative content of these compounds in different thicknesses ranging from ∼20 to 540 nm. This change in the relative content at different thicknesses leads to a change in optical and electrical properties including bandgap and the type of semiconductivity. A sharp transition from p to n-type of semiconductivity is observed by scanning tunneling spectroscopy measurements. We find that the spin-orbit interaction of Mo 3d electrons in the MoS2 and MoO3 enhances by significant reduction of the MoO3 content in thicker layers.
Publication status:
Published
Peer review status:
Peer reviewed

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Publisher copy:
10.1016/j.matdes.2017.02.085

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Institution:
University of Oxford
Division:
MPLS Division
Department:
Physics
Sub department:
Condensed Matter Physics
Department:
Unknown
Role:
Author


Publisher:
Elsevier
Journal:
Materials and Design More from this journal
Volume:
122
Pages:
220-225
Publication date:
2017-03-02
Acceptance date:
2017-02-27
DOI:
ISSN:
1873-4197 and 0264-1275


Keywords:
Pubs id:
pubs:990843
UUID:
uuid:977bb542-754f-4462-9d69-3b0b77bd4f5d
Local pid:
pubs:990843
Source identifiers:
990843
Deposit date:
2019-05-14

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