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Landau assisted vertical transport in MQW p-i-n GaAs/AlGaAs diodes

Abstract:
We report studies of sequential resonant tunneling in GaAs/AlGaAs multi-quantum well p-i-n structures in the presence of parallel magnetic fields up to 15 T. New features are observed which are attributed to inter-Landau level resonances involving a change of Landau index of +1 and +2. In one of the samples the tunnelling resonances saturate and shift with the magnetic field. This result may be related to the similar effects observed in coupled two-dimensional electron gases at high magnetic fields.
Publication status:
Published

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Institution:
University of Oxford
Department:
Oxford, MPLS, Physics, Condensed Matter Physics
Role:
Author
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Volume:
361
Issue:
1-3
Pages:
192-196
Publication date:
1996-01-01
DOI:
ISSN:
0039-6028
URN:
uuid:94cc2572-bf68-4b2f-a9cb-78a616385757
Source identifiers:
1281
Local pid:
pubs:1281

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