Landau assisted vertical transport in MQW p-i-n GaAs/AlGaAs diodes

Conference item

We report studies of sequential resonant tunneling in GaAs/AlGaAs multi-quantum well p-i-n structures in the presence of parallel magnetic fields up to 15 T. New features are observed which are attributed to inter-Landau level resonances involving a change of Landau index of +1 and +2. In one of the samples the tunnelling resonances saturate and shift with the magnetic field. This result may be related to the similar effects observed in coupled two-dimensional electron gases at high magnetic fields.

Authors: Stone, R; Michels, J; Wong, S; Foxon, C; Nicholas, R

• Publication status: Published
• Journal: SURFACE SCIENCE
• Volume: 361
• Issue: 1-3
• Pages: 192-196
• Publication date: 1996-01-01
• Event title: 11th International Conference on the Electronic Properties of 2-Dimensional Systems (EP2DS XI)
• DOI: 10.1016/0039-6028(96)00382-2
• ISSN: 0039-6028
• Keywords: quantum effects; quantum wells; tunneling; semiconductor-semiconductor interfaces; electrical transport measurements; photoconductivity; magnetic measurements; magnetic phenomena; gallium arsenide