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Electronic conduction in amorphous and polycrystalline zinc-indium oxide films

Abstract:

We report on the electronic properties of both amorphous and polycrystalline zinc-indium oxide thin films with similar degenerate electron concentrations just above the insulator-to-metal transition. The highest electron mobilities occur in amorphous oxide films deposited at 100 °C; for these, structural disorder is on a spatial scale much smaller than the characteristic electron wavelength (∼3 nm) of the conduction electron gas. For polycrystalline films fabricated at 200-300 °C enhanced ele...

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Publication status:
Published

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Publisher copy:
10.1063/1.3533382

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Institution:
University of Oxford
Department:
Oxford, MPLS, Chemistry, Inorganic Chemistry
Role:
Author
Journal:
APPLIED PHYSICS LETTERS
Volume:
97
Issue:
26
Pages:
262117-262117
Publication date:
2010-12-27
DOI:
ISSN:
0003-6951
URN:
uuid:93dbfd68-c21d-41c8-b152-501b8a880a57
Source identifiers:
120265
Local pid:
pubs:120265
Language:
English

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