- Abstract:
-
We report on the electronic properties of both amorphous and polycrystalline zinc-indium oxide thin films with similar degenerate electron concentrations just above the insulator-to-metal transition. The highest electron mobilities occur in amorphous oxide films deposited at 100 °C; for these, structural disorder is on a spatial scale much smaller than the characteristic electron wavelength (∼3 nm) of the conduction electron gas. For polycrystalline films fabricated at 200-300 °C enhanced ele...
Expand abstract - Publication status:
- Published
- Publisher copy:
- 10.1063/1.3533382
-
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- Journal:
- APPLIED PHYSICS LETTERS
- Volume:
- 97
- Issue:
- 26
- Pages:
- 262117-262117
- Publication date:
- 2010-12-27
- DOI:
- ISSN:
-
0003-6951
- URN:
-
uuid:93dbfd68-c21d-41c8-b152-501b8a880a57
- Source identifiers:
-
120265
- Local pid:
- pubs:120265
- Language:
- English
- Copyright date:
- 2010
Journal article
Electronic conduction in amorphous and polycrystalline zinc-indium oxide films
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