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Lowest surface recombination in n-type oxidised crystalline silicon by means of extrinsic field effect passivation

Abstract:

Surface recombination remains a major factor limiting the efficiency of silicon solar cells. The post-processing of dielectric films used as surface coatings has been previously demonstrated an effective technique to improve their passivation quality. In this paper extrinsic methods are demonstrated to produce the lowest reported surface recombination velocity in solar relevant n-type silicon. Recombination velocities below 2.8 cm/s at an injection of 1015 cm-3, are achieved using extrinsic f...

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Publication status:
Published
Peer review status:
Peer reviewed
Version:
Accepted Manuscript

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Publisher copy:
10.4229/EUPVSEC20162016-2AV.2.13

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Institution:
University of Oxford
Department:
Oxford, MPLS, Materials
More by this author
Institution:
University of Oxford
Department:
Oxford, MPLS, Materials
More by this author
Institution:
University of Oxford
Department:
Oxford, MPLS, Materials
Publisher:
EU PVSEC Publisher's website
Pages:
707-710
Publication date:
2016
DOI:
ISSN:
2196-100X
URN:
uuid:935728d7-f560-46b4-95ce-8d087ad1eb15
Source identifiers:
631082
Local pid:
pubs:631082
ISBN:
3-936338-41-8

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