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Hetero-site nucleation for growing twisted bilayer graphene with a wide range of twist angles

Abstract:
Two-dimensional (2D) materials such as graphene, transition metal dichalcogenides (TMDs), and their heterojunctions are prospective materials for future electronics, optoelectronics, and quantum technologies. Assembling different 2D layers offers unique ways to control optical, electrical, thermal, magnetic, and topological phenomena. Controlled fabrications of electronic grade 2D heterojunctions are of paramount importance. Here, we enlist novel and scalable strategies to fabricate 2D vertical and lateral heterojunctions, consisting of semiconductors, metals, and/or semimetals. Critical issues that need to be addressed are the device-to-device variations, reliability, stability, and performances of 2D heterostructures in electronic and optoelectronic applications. Also, stacking order-dependent formation of moir\ue9 excitons in 2D heterostructures are emerging with exotic physics and new opportunities. Furthermore, the realization of 2D heterojunction-based novel devices, including excitonic and valleytronic transistors, demands more extensive research efforts for real-world applications. We also outline emergent phenomena in 2D heterojunctions central to nanoelectronics, optoelectronics, spintronics, and energy applications
Publication status:
Published
Peer review status:
Peer reviewed

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Role:
Author
ORCID:
0000-0003-0518-0744
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Role:
Author
ORCID:
0000-0003-2169-1456
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Author
ORCID:
0000-0001-6098-6164
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Role:
Author
ORCID:
0000-0001-8572-3547
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Role:
Author
ORCID:
0000-0001-8914-8068


Publisher:
Nature Research
Journal:
Nature Communications More from this journal
Volume:
12
Issue:
1
Pages:
2391-2391
Article number:
2391
Publication date:
2021-04-22
DOI:
EISSN:
2041-1723
ISSN:
2041-1723


Language:
English
Keywords:
Pubs id:
1173279
Local pid:
pubs:1173279
Source identifiers:
W3155346726
Deposit date:
2026-03-24
ARK identifier:
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