N-Doping improves charge transport and morphology in the organic non-fullerene acceptor O-IDTBR

Paterson, AF; Li, R; Markina, A; Tsetseris, L; MacPhee, S; Faber, H; Emwas, A-H; Panidi, J; Bristow, H; Wadsworth, A; Baran, D; Andrienko, D; Heeney, M; McCulloch, I; Anthopoulos, TD

Journal article

N-Doping improves charge transport and morphology in the organic non-fullerene acceptor O-IDTBR

Abstract:: Molecular doping has been shown to improve the performance of various organic (opto)electronic devices. When compared to p-doped systems, research into n-doped organic small-molecules is relatively limited, primarily due to the lack of suitable dopants and the often encountered unfavourable microstructural effects. These factors have prevented the use of n-doping in a wider range of existing materials, such as non-fullerene acceptors (NFAs), that have already shown great promise for a range of (opto)electronic applications. Here, we show that several different molecular n-dopants, namely [1,2-b:2′,1′-d]benzo[i][2.5]benzodiazocine potassium triflate adduct (DMBI-BDZC), tetra-n-butylammonium fluoride (TBAF) and 4-(2,3-dihydro-1,3-dimethyl-1H-benzimidazol-2-yl)-N,N-dimethylbenzenamine (N-DMBI), can be used to n-dope the molecular semiconductor O-IDTBR, a promising NFA, and increase the electron field-effect mobility to >1 cm2 V-1 s-1. By combining complementary experimental techniques with computer simulations of doping and charge carrier dynamics, we show that improved charge transport arises from synergistic effects of n-type doping and morphological changes. Specifically, a new, previously unreported dopant-induced packing orientation results in one of the highest electron mobility values reported to-date for an NFA molecule. Overall, this work highlights the importance of dopant-semiconductor interactions and their impact on morphology, showing that dopant-induced molecular packing motifs may be generic and a key element of the charge transport enhancement observed in doped organics.

Publication status:: Published

Peer review status:: Peer reviewed

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APA Style

Paterson, A. F., Li, R., Markina, A., Tsetseris, L., MacPhee, S., Faber, H., Emwas, A.-H., Panidi, J., Bristow, H., Wadsworth, A., Baran, D., Andrienko, D., Heeney, M., McCulloch, I., & Anthopoulos, T. D. (2021). N-Doping improves charge transport and morphology in the organic non-fullerene acceptor O-IDTBR. Journal of Materials Chemistry C Materials for Optical and Electronic Devices, 9(13), 4486–4495.

MLA Style

Paterson, AF, et al. “N-Doping Improves Charge Transport and Morphology in the Organic Non-Fullerene Acceptor O-IDTBR.” Journal of Materials Chemistry C Materials for Optical and Electronic Devices, vol. 9, no. 13, 2021, pp. 4486–95.

Chicago Style

Paterson, AF, R Li, A Markina, et al. 2021. “N-Doping Improves Charge Transport and Morphology in the Organic Non-Fullerene Acceptor O-IDTBR.” Journal of Materials Chemistry C Materials for Optical and Electronic Devices 9 (13): 4486–95.
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