Hot phonons and non-thermal carrier states in GaN

Journal article

Non-thermal carrier states at early times are studied using femtosecond pump-probe spectroscopy in GaN. After the residual chirp on the continuum probe is removed, the normalized difference spectra (NDS) for different probe energies are synchronized, recovering the full time resolution of our laser pulse (120 fs). Our Monte-Carlo simulation agree well with the unchirped NDS spectrum, which shows the development of the carrier distribution at early times, where phonon satellites are seen, together with a strong non-thermal electron distribution in the region of the LO-phonon energy arising from the remarkably strong electron-LO phonon interaction. Employing a new technique which involves the integration of the normalized NDS multiplied by the corresponding energy, a measure of the mean energy of the carriers in non-thermal states is obtained. By comparing the time-dependent energy loss with the theoretical energy loss rate, we estimate the effective temperature of the phonon modes as well as the population of phonons. Our Monte-Carlo model agrees well with this data, and confirms the dominance of hot phonon effects at early times. © 2002 Elsevier Science B.V. All rights reserved.

Authors: Kyhm, K; Taylor, R; O'Sullivan, E; Ryan, J; Cain, N

• Journal: Physica B: Condensed Matter
• Volume: 314
• Issue: 1-4
• Pages: 30-34
• Publication date: 2002-03-01
• DOI: 10.1016/S0921-4526(01)01438-7
• ISSN: 0921-4526
• Language: English
• Keywords: Electron hole plasmas; Hot carriers; GaN; Hot phonons