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The influence of surfaces on the transient terahertz conductivity and electron mobility of GaAs nanowires

Abstract:

Bare unpassivated GaAs nanowires feature relatively high electron mobilities (400–2100 cm2 V−1 s−1) and ultrashort charge carrier lifetimes (1–5 ps) at room temperature. These two properties are highly desirable for high speed optoelectronic devices, including photoreceivers, modulators and switches operating at microwave and terahertz frequencies. When engineering these GaAs nanowire-based devices, it is important to have a quantitative understanding of how the charge carrier mobility and li...

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Publication status:
Published
Peer review status:
Peer reviewed
Version:
Publisher's Version

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Publisher copy:
10.1088/1361-6463/aa6a8f

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Institution:
University of Oxford
Division:
MPLS Division
Department:
Physics
Subgroup:
Condensed Matter Physics
Role:
Author
More by this author
Institution:
University of Oxford
Division:
MPLS Division
Department:
Physics
Subgroup:
Condensed Matter Physics
Role:
Author
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Publisher:
IOP Publishing Publisher's website
Journal:
Journal of Physics D: Applied Physics Journal website
Volume:
50
Issue:
22
Pages:
Article: 224001
Publication date:
2017-03-31
Acceptance date:
2017-03-31
DOI:
EISSN:
1361-6463
ISSN:
0022-3727
Pubs id:
pubs:687833
URN:
uri:8ee41bf5-7e40-4870-89a0-323b3cddf489
UUID:
uuid:8ee41bf5-7e40-4870-89a0-323b3cddf489
Local pid:
pubs:687833

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