Testbeam characterization of a 3D silicon sensor read out by Timepix4

Journal article

Abstract Testbeam results from a 300 μm-thick 3D silicon sensor bump-bonded to a Timepix4 ASIC, are presented. The hit detection efficiency, spatial resolution, and timing performance of the 3D sensor are studied for several track angles, bias voltages and charge thresholds. The time measurements are corrected for Timepix4 clock-frequency variations and timewalk, while for the spatial studies, nonlinear charge-sharing corrections are determined. At perpendicular incidence, the time resolution of the 3D detector is equal to 245 ps with a 97 % hit detection efficiency. An optimal angle of 8 ∘ with respect to the beam direction of the 3D detector was found, in which the time resolution improves by 6 % compared to normal incidence, while the hit detection efficiency reaches above 99 % and the spatial resolution is approximately 7 μm. Intrapixel studies show that a time resolution of 153 ps at the most probable value of the signal charge can be achieved for hits between the electrodes at normal incidence, while the timing performance of these best-performing regions deteriorate upon sensor rotation. The timing properties at different depths of the 3D sensor have been investigated with tracks at grazing-angle incidence, revealing a dependence of the time resolution along the sensor depth.

Authors: Chatzianagnostou, E; Madurai, MJ; Akiba, K; Bacher, D; Bates, R

• Publication status: Published
• Peer review status: Peer reviewed
• Publisher: IOP Publishing
• Journal: Journal of Instrumentation More from this journal
• Volume: 21
• Issue: 10
• Pages: P10024-P10024
• Publication date: 2026-10-15
• DOI: 10.1088/1748-0221/21/10/p10024
• EISSN: 1748-0221
• ISSN: 1748-0221
• Language: English
• Keywords: bias voltage; bump bonding; 3D silicon sensors; Timepix4; spatial resolution; temporal resolution