Journal article
Nitrogen in silicon: Diffusion at 500-750 °C and interaction with dislocations
- Abstract:
-
The results of dislocation unlocking experiments using nitrogen-doped float-zone silicon are reported. Dislocation unlocking stress is measured in specimens subjected to anneals for a range of durations and temperatures. Analysis of the rate of the initial rise in unlocking stress with annealing time gives an activation energy for nitrogen diffusion of 3.24 eV in the 500-750 °C temperature range. Numerical simulations of nitrogen diffusion to the dislocation core allow an approximate value of...
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- Publisher copy:
- 10.1016/j.mseb.2008.09.004
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Bibliographic Details
- Journal:
- Materials Science and Engineering B: Solid-State Materials for Advanced Technology
- Volume:
- 159-160
- Issue:
- C
- Pages:
- 95-98
- Publication date:
- 2009-03-15
- DOI:
- ISSN:
-
0921-5107
- Source identifiers:
-
176457
Item Description
Terms of use
- Copyright date:
- 2009
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