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Nitrogen in silicon: Diffusion at 500-750 °C and interaction with dislocations

Abstract:

The results of dislocation unlocking experiments using nitrogen-doped float-zone silicon are reported. Dislocation unlocking stress is measured in specimens subjected to anneals for a range of durations and temperatures. Analysis of the rate of the initial rise in unlocking stress with annealing time gives an activation energy for nitrogen diffusion of 3.24 eV in the 500-750 °C temperature range. Numerical simulations of nitrogen diffusion to the dislocation core allow an approximate value of...

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Publisher copy:
10.1016/j.mseb.2008.09.004

Authors


Alpass, CR More by this author
Murphy, JD More by this author
Falster, RJ More by this author
More by this author
Institution:
University of Oxford
Department:
Oxford, MPLS, Materials
Journal:
Materials Science and Engineering B: Solid-State Materials for Advanced Technology
Volume:
159-160
Issue:
C
Pages:
95-98
Publication date:
2009-03-15
DOI:
ISSN:
0921-5107
URN:
uuid:8ca4a00b-83f1-4a5e-90c9-c03aa44e0f4b
Source identifiers:
176457
Local pid:
pubs:176457
Language:
English
Keywords:

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