The growth rate effect on the nitrogen aggregation in HTHP grown synthetic diamonds

Conference item

Plates cut out parallel to the (110) plane from high quality synthetic diamond crystals grown in the Fe-Ni-C system by a temperature gradient method at pressure 6 Gpa and temperature 1500-1550 degrees C were comprehensively studied. Analysis of the sector structure allows determination of the average and relative growth rates of each octahedral growth sector. Concentrations of nitrogen-related C, A, and Ni centers in some profiles of different octahedral growth sectors were analyzed by FTIR spectroscopy. The regularities of the spatial distribution of A-defects are consistent with the assumption that A-defects were formed in the crystals as a result of annealing during crystal growth. It was found that A-defect formation proceeds more intensively in octahedral growth sectors which were formed at higher linear growth rates. Possible mechanisms for the growth rate effect on the nitrogen aggregation process in synthetic diamonds are proposed. (C) 2000 Elsevier Science S.A. All rights reserved.

Authors: Babich, Y; Feigelson, B; Fisher, D; Yelisseyev, A; Nadolinny, V

• Publication status: Published
• Publisher: Elsevier
• Journal: DIAMOND AND RELATED MATERIALS
• Volume: 9
• Issue: 3-6
• Pages: 893-896
• Publication date: 2000-01-01
• Event title: 10th European Conference on Diamond, Diamond-Like Materials, Nitrides and Silicon Carbide (Diamond 1999)
• DOI: 10.1016/S0925-9635(99)00205-8
• ISSN: 0925-9635
• Keywords: annealing; synthetic diamond; crystal growth; nitrogen