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Bridging the reality gap in quantum devices with physics-aware machine learning

Abstract:
The discrepancies between reality and simulation impede the optimization and scalability of solid-state quantum devices. Disorder induced by the unpredictable distribution of material defects is one of the major contributions to the reality gap. We bridge this gap using physics-aware machine learning, in particular, using an approach combining a physical model, deep learning, Gaussian random field, and Bayesian inference. This approach enables us to infer the disorder potential of a nanoscale electronic device from electron-transport data. This inference is validated by verifying the algorithm’s predictions about the gate-voltage values required for a laterally defined quantum-dot device in AlGaAs/GaAs to produce current features corresponding to a double-quantum-dot regime.
Publication status:
Published
Peer review status:
Peer reviewed

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Publisher copy:
10.1103/physrevx.14.011001

Authors


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Institution:
University of Oxford
Division:
MPLS
Department:
Materials
Role:
Author
More by this author
Institution:
University of Oxford
Division:
MPLS
Department:
Materials
Role:
Author
More by this author
Institution:
University of Oxford
Division:
MPLS
Department:
Materials
Role:
Author
ORCID:
0000-0003-4466-5576
More by this author
Institution:
University of Oxford
Division:
MPLS
Department:
Materials
Role:
Author
More by this author
Institution:
University of Oxford
Division:
MPLS
Department:
Materials
Role:
Author


More from this funder
Grant:
EP/N014995/1
Programme:
National Quantum Technology Hub in Networked Quantum Information Technology
More from this funder
Funder identifier:
https://ror.org/03wnrjx87
Grant:
URF\R1\191150
More from this funder
Funder identifier:
https://ror.org/0439y7842
Grant:
EP/R029229/1
EP/M013243/1
More from this funder
Funder identifier:
https://ror.org/0472cxd90
Grant:
948932


Publisher:
American Physical Society
Journal:
Physical Review X More from this journal
Volume:
14
Issue:
1
Article number:
11001
Publication date:
2024-01-04
Acceptance date:
2023-09-29
DOI:
EISSN:
2160-3308


Language:
English
Pubs id:
1609358
Local pid:
pubs:1609358
Deposit date:
2024-03-08

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