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THE ROLE OF INTERFACE QUALITY IN RESONANT-TUNNELING BETWEEN TRANSVERSE X-STATES IN GAAS/ALAS DOUBLE-BARRIER STRUCTURES PRESSURIZED BEYOND THE TYPE-II TRANSITION

Abstract:

We examine in detail the first high pressure resonance related to tunneling between the lowest transverse X-state in each AlAs layer, of GaAs/AlAs 'double barrier' structures with equal AlAs thicknesses grown by Molecular Beam Epitaxy (MBE) calibrated using Reflection High Energy Electron Diffraction (RHEED), and we compare the results with previously reported measurements on Metalorganic Vapour Phase Epitaxy (MOVPE) grown structures. The resonance, which does not conserve in-plane momentum, ...

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Publication status:
Published

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Journal:
JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS
Volume:
56
Issue:
3-4
Pages:
475-479
Publication date:
1995-01-01
Event title:
6th International Conference on High Pressure Semiconductor Physics (HPSP VI)
DOI:
ISSN:
0022-3697
Source identifiers:
8100
Keywords:
Pubs id:
pubs:8100
UUID:
uuid:8890e1ca-4563-427c-b9b4-9201bcf18b8a
Local pid:
pubs:8100
Deposit date:
2012-12-19

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