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THE ROLE OF INTERFACE QUALITY IN RESONANT-TUNNELING BETWEEN TRANSVERSE X-STATES IN GAAS/ALAS DOUBLE-BARRIER STRUCTURES PRESSURIZED BEYOND THE TYPE-II TRANSITION

Abstract:

We examine in detail the first high pressure resonance related to tunneling between the lowest transverse X-state in each AlAs layer, of GaAs/AlAs 'double barrier' structures with equal AlAs thicknesses grown by Molecular Beam Epitaxy (MBE) calibrated using Reflection High Energy Electron Diffraction (RHEED), and we compare the results with previously reported measurements on Metalorganic Vapour Phase Epitaxy (MOVPE) grown structures. The resonance, which does not conserve in-plane momentum, ...

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Publication status:
Published

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Volume:
56
Issue:
3-4
Pages:
475-479
Publication date:
1995-01-01
DOI:
ISSN:
0022-3697
URN:
uuid:8890e1ca-4563-427c-b9b4-9201bcf18b8a
Source identifiers:
8100
Local pid:
pubs:8100

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