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Microstructural origins of localization in InGaN quantum wells

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APA Style

Oliver, R., Bennett, S. E., Zhu, T., Beesley, D., Kappers, M., Saxey, D., Cerezo, A., & Humphreys, C. (2010). Microstructural origins of localization in InGaN quantum wells. JOURNAL OF PHYSICS D-APPLIED PHYSICS, 43(35), 354003–354003.

MLA Style

Oliver, R., et al. “Microstructural Origins of Localization in InGaN Quantum Wells.” JOURNAL OF PHYSICS D-APPLIED PHYSICS, vol. 43, no. 35, 2010, pp. 354003–03.

Chicago Style

Oliver, R, SE Bennett, T Zhu, D Beesley, M Kappers, D Saxey, A Cerezo, and C Humphreys. 2010. “Microstructural Origins of Localization in InGaN Quantum Wells.” JOURNAL OF PHYSICS D-APPLIED PHYSICS 43 (35): 354003–.
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Publisher copy:: 10.1088/0022-3727/43/35/354003

Authors

+ Oliver, R More by this author

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+ Bennett, SE More by this author

Role:: Author

+ Zhu, T More by this author

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+ Beesley, D More by this author

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+ Kappers, M More by this author

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Journal:: JOURNAL OF PHYSICS D-APPLIED PHYSICS More from this journal
Volume:: 43
Issue:: 35
Pages:: 354003-354003
Publication date:: 2010-09-08
DOI:: 10.1088/0022-3727/43/35/354003
EISSN:: 1361-6463
ISSN:: 0022-3727

Pubs id:: pubs:71185
UUID:: uuid:873280ba-77ef-46bb-a887-55a89a7f6dfc
Local pid:: pubs:71185
Source identifiers:: 71185
Deposit date:: 2012-12-19

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Copyright date:: 2010

Licence:: Terms and Conditions of Use for Oxford University Research Archive

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