Blowing of polycrystalline silicon fuses

Journal article

Polycrystalline silicon fuses are one time programmable memory elements which allow the calibration of integrated circuits at wafer and package level. We present a zero-dimensional lumped parameter model of the programming of fuses made from a combination of tungsten silicide and polycrystalline silicon. The components of the model are an electrical model, a thermal model, and a flow model. The model generates quantitatively accurate results and reproduces trends with applied voltage and fuse size. © 2010 American Institute of Physics.

Authors: Lee, W; Fowler, A; Power, O; Healy, S; Browne, J

• Publication status: Published
• Journal: APPLIED PHYSICS LETTERS
• Volume: 97
• Issue: 2
• Pages: 023502-023502
• Publication date: 2010-07-12
• DOI: 10.1063/1.3457469
• ISSN: 0003-6951
• Language: English
• Keywords: electrodes; organic semiconductors; thin film transistors; point contacts; diffraction; gold; charge injection