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ELECTRICAL AND OPTICAL-PROPERTIES OF DISLOCATIONS IN GAAS

Publication status:: Published

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APA Style

Farvacque, J., Vignaud, D., Depraetere, E., Sieber, B., & Lefebvre, A. (1989). ELECTRICAL AND OPTICAL-PROPERTIES OF DISLOCATIONS IN GAAS. 104, 141–150.

MLA Style

Farvacque, J., et al. ELECTRICAL AND OPTICAL-PROPERTIES OF DISLOCATIONS IN GAAS. 1989, pp. 141–50.

Chicago Style

Farvacque, J, D Vignaud, E Depraetere, B Sieber, and A Lefebvre. 1989. “ELECTRICAL AND OPTICAL-PROPERTIES OF DISLOCATIONS IN GAAS.” In , 104:141–50.
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Authors

+ Farvacque, J More by this author

Role:: Author

+ Vignaud, D More by this author

Role:: Author

+ Depraetere, E More by this author

Role:: Author

+ Sieber, B More by this author

Role:: Author

+ Lefebvre, A More by this author

Role:: Author

Journal:: STRUCTURE AND PROPERTIES OF DISLOCATIONS IN SEMICONDUCTORS 1989 More from this journal
Volume:: 104
Pages:: 141-150
Publication date:: 1989-01-01
Event title:: 6TH INTERNATIONAL SYMP ON THE STRUCTURE AND PROPERTIES OF DISLOCATIONS IN SEMICONDUCTORS
ISBN:: 0854980601

Keywords:: PLASTICALLY-DEFORMED GAAS

III-V COMPOUNDS

DEFECTS

GALLIUM-ARSENIDE

GLIDE

LUMINESCENCE
Pubs id:: pubs:18081
UUID:: uuid:8523c752-afbb-4b80-9079-dd2bdb09fcfe
Local pid:: pubs:18081
Source identifiers:: 18081
Deposit date:: 2012-12-19

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Copyright date:: 1989

Licence:: Terms and Conditions of Use for Oxford University Research Archive

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