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Terahertz emission and lifetime measurements of ion-implanted semiconductors: Experiment and simulation

Abstract:
The spectral width of terahertz emission from ion-implanted terahertz emitters increases with ion damage, owing to ultrafast carrier capture. Carrier dynamics simulations reinforce these findings. Optical-pump, terahertz-probe experiments confirm the subpicosecond lifetimes of these materials. © 2006 Optical Society of America.

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Publisher copy:
10.1109/CLEO.2006.4628606

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Journal:
Conference on Lasers and Electro-Optics and 2006 Quantum Electronics and Laser Science Conference, CLEO/QELS 2006 More from this journal
Publication date:
2006-01-01
DOI:


Language:
English
Pubs id:
pubs:191327
UUID:
uuid:83b164eb-7e90-46f2-84d5-b86979da2434
Local pid:
pubs:191327
Source identifiers:
191327
Deposit date:
2012-12-19

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