Journal article
Terahertz emission and lifetime measurements of ion-implanted semiconductors: Experiment and simulation
- Abstract:
- The spectral width of terahertz emission from ion-implanted terahertz emitters increases with ion damage, owing to ultrafast carrier capture. Carrier dynamics simulations reinforce these findings. Optical-pump, terahertz-probe experiments confirm the subpicosecond lifetimes of these materials. © 2006 Optical Society of America.
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Authors
- Journal:
- Conference on Lasers and Electro-Optics and 2006 Quantum Electronics and Laser Science Conference, CLEO/QELS 2006 More from this journal
- Publication date:
- 2006-01-01
- DOI:
- Language:
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English
- Pubs id:
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pubs:191327
- UUID:
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uuid:83b164eb-7e90-46f2-84d5-b86979da2434
- Local pid:
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pubs:191327
- Source identifiers:
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191327
- Deposit date:
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2012-12-19
Terms of use
- Copyright date:
- 2006
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