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Towards long-term photostability of solid-state dye sensitized solar cells

Abstract:
The solid-state dye-sensitized solar cell (DSSC) was introduced to overcome inherent manufacturing and instability issues of the electrolyte-based DSSC and progress has been made to deliver high photovoltaic efficiencies at low cost. However, despite 15 years research and development, there still remains no clear demonstration of long-term stability. Here, solid-state DSSCs are subjected to the severe aging conditions of continuous illumination at an elevated temperature. A fast deterioration in performance is observed for devices encapsulated in the absence of oxygen. The photovoltaic performance recovers when re-exposed to air. This reversible behavior is attributed to three related processes: i) the creation of light and oxygen sensitive electronic shunting paths between TiO2 and the top metal electrode, ii) increased recombination at the TiO2/organic interface, and iii) the creation of deep electron traps that reduce the photocurrent. The device deterioration is remedied by the formation of an insulating alumino-silicate shell around the TiO2 nanocrystals, which reduces interfacial recombination, and the introduction of an insulating mesoporous SiO2 buffer layer between the top electrode and TiO2, which acts as a permanent insulating barrier between the TiO2 and the metal electrode, preventing shunting. Encapsulated solid-state dye-sensitized solar cells (ssDSSCs) show a reversible and quick deterioration in performance while aging under inert atmosphere. This is attributed to the activation of deep traps and the change in Schottky barrier at the TiO2 surface. This is remedied by forming an insulating alumino-silicate "shell" around the TiO2 nanocrystals, and by introducing an insulating mesoporous SiO2 "buffer layer" between the top electrode and TiO2. © 2014 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim.

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Publisher copy:
10.1002/aenm.201301667

Authors


Publisher:
Wiley
Journal:
Advanced Energy Materials More from this journal
Volume:
4
Issue:
8
Publication date:
2014-06-03
DOI:
EISSN:
1614-6840
ISSN:
1614-6832


Language:
English
Keywords:
Pubs id:
pubs:470995
UUID:
uuid:818177ca-7138-4c5f-a17f-a6c22f6d6f31
Local pid:
pubs:470995
Source identifiers:
470995
Deposit date:
2014-07-11
ARK identifier:

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