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Damping of exciton Rabi rotations by acoustic phonons in optically excited InGaAs/GaAs quantum dots.

Abstract:
We report experimental evidence identifying acoustic phonons as the principal source of the excitation-induced-dephasing (EID) responsible for the intensity damping of quantum dot excitonic Rabi rotations. The rate of EID is extracted from temperature dependent Rabi rotation measurements of the ground-state excitonic transition, and is found to be in close quantitative agreement with an acoustic-phonon model.
Publication status:
Published

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Publisher copy:
10.1103/physrevlett.104.017402

Authors


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Institution:
University of Oxford
Division:
MPLS
Department:
Materials
Role:
Author


Journal:
Physical Review Letters More from this journal
Volume:
104
Issue:
1
Pages:
017402
Publication date:
2010-01-01
DOI:
EISSN:
1079-7114
ISSN:
0031-9007


Language:
English
Pubs id:
pubs:48493
UUID:
uuid:806e0b82-b883-4ca8-a143-517d8065b842
Local pid:
pubs:48493
Source identifiers:
48493
Deposit date:
2012-12-19

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