Cross section and resonance effects in photoemission from Sn-doped In2O3(111)

Journal article

Photoemission spectra of Sn-doped In 2O 3(111) have been measured using a range of photon energies between 40 and 1300 eV. The intensity of structure at the bottom of the valence band associated with states of mixed Sn 5s/O 2p character increases with increasing photon energy relative to that of states of more dominantly O 2p character at the top of the valence band, as expected from one electron ionisation cross sections. In addition a pronounced resonance in the intensity of a weak conduction band feature is observed around the In 4p core threshold. © 2011 Elsevier Ltd. All rights reserved.

Authors: Zhang, K; Payne, D; Egdell, R

• Publication status: Published
• Journal: SOLID STATE COMMUNICATIONS
• Volume: 152
• Issue: 3
• Pages: 194-198
• Publication date: 2012-02-01
• DOI: 10.1016/j.ssc.2011.11.008
• ISSN: 0038-1098
• Language: English
• Keywords: Photoelectron spectroscopies; Semiconductors; Electronic band structure; Epitaxy