Journal article
Laser writing of individual nitrogen-vacancy defects in diamond with near-unity yield
- Abstract:
- Atomic defects in wide-bandgap materials, such as the nitrogen-vacancy (NV) color center in diamond, show considerable promise for the development of a new generation of quantum information technologies, but progress has been hampered by the inability to produce and engineer the defects in a controlled manner. Here, we demonstrate an all-optical method for the deterministic writing of individual NV centers at selected locations with high positioning accuracy. Ultrashort pulse laser processing is used to both create and diffuse defects inside the crystal through local annealing. During the laser-annealing process, online fluorescence feedback provides a trigger to stop processing once the NV formation is detected. This method provides a new tool for the optical fabrication of engineered materials and devices for quantum technologies.
- Publication status:
- Published
- Peer review status:
- Peer reviewed
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(Preview, Version of record, pdf, 1.4MB, Terms of use)
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- Publisher copy:
- 10.1364/OPTICA.6.000662
Authors
- Publisher:
- OSA Publishing
- Journal:
- Optica More from this journal
- Volume:
- 6
- Issue:
- 5
- Pages:
- 662-667
- Publication date:
- 2019-05-10
- Acceptance date:
- 2019-04-05
- DOI:
- EISSN:
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2334-2536
- Pubs id:
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pubs:987716
- UUID:
-
uuid:7cc4646b-1c39-4f5a-a472-4c8428fddc54
- Local pid:
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pubs:987716
- Source identifiers:
-
987716
- Deposit date:
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2019-04-08
- ARK identifier:
Terms of use
- Copyright holder:
- OSA
- Copyright date:
- 2019
- Notes:
- © 2019 Optical Society of America
- Licence:
- CC Attribution (CC BY)
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