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Journal article

Laser writing of individual nitrogen-vacancy defects in diamond with near-unity yield

Abstract:
Atomic defects in wide-bandgap materials, such as the nitrogen-vacancy (NV) color center in diamond, show considerable promise for the development of a new generation of quantum information technologies, but progress has been hampered by the inability to produce and engineer the defects in a controlled manner. Here, we demonstrate an all-optical method for the deterministic writing of individual NV centers at selected locations with high positioning accuracy. Ultrashort pulse laser processing is used to both create and diffuse defects inside the crystal through local annealing. During the laser-annealing process, online fluorescence feedback provides a trigger to stop processing once the NV formation is detected. This method provides a new tool for the optical fabrication of engineered materials and devices for quantum technologies.
Publication status:
Published
Peer review status:
Peer reviewed

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Publisher copy:
10.1364/OPTICA.6.000662

Authors

More by this author
Institution:
University of Oxford
Division:
MPLS Division
Department:
Materials
Role:
Author
More by this author
Institution:
University of Oxford
Division:
MPLS Division
Department:
Materials
Role:
Author
More by this author
Institution:
University of Oxford
Division:
MPLS Division
Department:
Materials
Role:
Author
More by this author
Institution:
University of Oxford
Division:
MPLS Division
Department:
Materials
Role:
Author
More by this author
Institution:
University of Oxford
Division:
MPLS Division
Department:
Materials
Role:
Author


Publisher:
OSA Publishing
Journal:
Optica More from this journal
Volume:
6
Issue:
5
Pages:
662-667
Publication date:
2019-05-10
Acceptance date:
2019-04-05
DOI:
EISSN:
2334-2536


Pubs id:
pubs:987716
UUID:
uuid:7cc4646b-1c39-4f5a-a472-4c8428fddc54
Local pid:
pubs:987716
Source identifiers:
987716
Deposit date:
2019-04-08
ARK identifier:

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