Journal article
Photo-induced optical activity in phase-change memory materials
- Abstract:
- We demonstrate that optical activity in amorphous isotropic thin films of pure Ge2Sb2Te5 and N-doped Ge2Sb2Te5N phase-change memory materials can be induced using rapid photo crystallisation with circularly polarised laser light. The new anisotropic phase transition has been confirmed by circular dichroism measurements. This opens up the possibility of controlled induction of optical activity at the nanosecond time scale for exploitation in a new generation of high-density optical memory, fast chiroptical switches and chiral metamaterials.
- Publication status:
- Published
- Peer review status:
- Peer reviewed
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(Preview, Version of record, pdf, 737.4KB, Terms of use)
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- Publisher copy:
- 10.1038/srep08770
Authors
+ Engineering and Physical Sciences Research Council
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- Grant:
- EP/H02607X/1
- EP/M015130/1
- EP/M008487/1
- EP/K032518/1
- Publisher:
- Springer Nature
- Journal:
- Scientific Reports More from this journal
- Volume:
- 5
- Pages:
- 8770
- Publication date:
- 2015-03-05
- Acceptance date:
- 2015-01-27
- DOI:
- ISSN:
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2045-2322
- Pmid:
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25740351
- Language:
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English
- Keywords:
- Pubs id:
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pubs:509336
- UUID:
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uuid:788146fc-00dd-4ea6-9f99-441891e3d24b
- Local pid:
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pubs:509336
- Source identifiers:
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509336
- Deposit date:
-
2019-05-08
Terms of use
- Copyright holder:
- Borisenko et al
- Copyright date:
- 2015
- Notes:
- This work is licensed under a Creative Commons Attribution 4.0 International License. The images or other third party material in this article are included in the article's Creative Commons license, unless indicated otherwise in the credit line; if the material is not included under the Creative Commons license, users will need to obtain permission from the license holder in order to reproduce the material. To view a copy of this license, visit http://creativecommons.org/licenses/by/4.0/
- Licence:
- CC Attribution (CC BY)
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