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Photo-induced optical activity in phase-change memory materials

Abstract:
We demonstrate that optical activity in amorphous isotropic thin films of pure Ge2Sb2Te5 and N-doped Ge2Sb2Te5N phase-change memory materials can be induced using rapid photo crystallisation with circularly polarised laser light. The new anisotropic phase transition has been confirmed by circular dichroism measurements. This opens up the possibility of controlled induction of optical activity at the nanosecond time scale for exploitation in a new generation of high-density optical memory, fast chiroptical switches and chiral metamaterials.
Publication status:
Published
Peer review status:
Peer reviewed
Version:
Publisher's Version

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Publisher copy:
10.1038/srep08770

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Institution:
University of Oxford
Division:
MPLS Division
Department:
Materials
ORCID:
0000-0002-2368-4500
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ORCID:
0000-0002-7326-5953
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Institution:
University of Oxford
Division:
MPLS Division
Department:
Engineering Science
Oxford college:
Jesus College
ORCID:
0000-0002-5509-7925
More by this author
Institution:
University of Oxford
Division:
MPLS Division
Department:
Physics
Subgroup:
Atomic & Laser Physics
Oxford college:
Jesus College, Worcester
Gholipour, B More by this author
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Publisher:
Springer Nature Publisher's website
Journal:
Scientific Reports Journal website
Volume:
5
Pages:
8770
Publication date:
2015-03-05
Acceptance date:
2015-01-27
DOI:
ISSN:
2045-2322
Pubs id:
pubs:509336
URN:
uri:788146fc-00dd-4ea6-9f99-441891e3d24b
UUID:
uuid:788146fc-00dd-4ea6-9f99-441891e3d24b
Local pid:
pubs:509336

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