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The development of information storage materials - How microscopy can help?

Abstract:

The response of giant magnetoresistance (GMR) devices depends critically on the film microstructure, with parameters such as layer thickness and interfacial abruptness being crucial. This paper presents results obtained using high resolution electron microscopy (HREM), chemical mapping and atom probe microanalysis. Local variations in the magnetic properties are induced by the microstructure and also when the films are patterned to form small elements, These lead to changes in the magnetizati...

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Publication status:
Published

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Publisher copy:
10.1007/s12043-002-0228-8

Authors


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Institution:
University of Oxford
Division:
MPLS
Department:
Materials
Role:
Author
Journal:
PRAMANA-JOURNAL OF PHYSICS
Volume:
58
Issue:
5-6
Pages:
1125-1129
Publication date:
2002-01-01
Event title:
International Symposium on Advances in Superconductivity and Magnetism: Materials, Mechanisms, and Devices (ASMM2D-2001)
DOI:
EISSN:
0973-7111
ISSN:
0304-4289
Source identifiers:
5900
Keywords:
Pubs id:
pubs:5900
UUID:
uuid:7871b5e2-cf75-4893-9bfc-7472800296c7
Local pid:
pubs:5900
Deposit date:
2012-12-19

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