The development of information storage materials - How microscopy can help?

Conference item

The response of giant magnetoresistance (GMR) devices depends critically on the film microstructure, with parameters such as layer thickness and interfacial abruptness being crucial. This paper presents results obtained using high resolution electron microscopy (HREM), chemical mapping and atom probe microanalysis. Local variations in the magnetic properties are induced by the microstructure and also when the films are patterned to form small elements, These lead to changes in the magnetization reversal mechanism. Some results of the studies of the magnetization reversal carried out using in situ in Lorentz transmission electron microscopy (LTEM) magnetizing experiments are also included.

Authors: Petford-Long, A; Portier, X; Shang, P; Cerezo, A; Larson, D

• Publication status: Published
• Journal: PRAMANA-JOURNAL OF PHYSICS
• Volume: 58
• Issue: 5-6
• Pages: 1125-1129
• Publication date: 2002-01-01
• Event title: International Symposium on Advances in Superconductivity and Magnetism: Materials, Mechanisms, and Devices (ASMM2D-2001)
• DOI: 10.1007/s12043-002-0228-8
• EISSN: 0973-7111
• ISSN: 0304-4289
• Keywords: magnetic domains; high resolution transmission electron microscopy; atom probe analysis; information storage materials