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The development of information storage materials - How microscopy can help?

Abstract:

The response of giant magnetoresistance (GMR) devices depends critically on the film microstructure, with parameters such as layer thickness and interfacial abruptness being crucial. This paper presents results obtained using high resolution electron microscopy (HREM), chemical mapping and atom probe microanalysis. Local variations in the magnetic properties are induced by the microstructure and also when the films are patterned to form small elements, These lead to changes in the magnetizati...

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Publication status:
Published

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Publisher copy:
10.1007/s12043-002-0228-8

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Institution:
University of Oxford
Department:
Oxford, MPLS, Materials
Role:
Author
Volume:
58
Issue:
5-6
Pages:
1125-1129
Publication date:
2002-01-01
DOI:
EISSN:
0973-7111
ISSN:
0304-4289
URN:
uuid:7871b5e2-cf75-4893-9bfc-7472800296c7
Source identifiers:
5900
Local pid:
pubs:5900

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