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ELECTRON-BEAM-INDUCED ACTIVITY OF DEFECTS IN SILICON

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APA Style

Wilshaw, P., Fell, T., Amaku, C., & Decoteau, M. (1994). ELECTRON-BEAM-INDUCED ACTIVITY OF DEFECTS IN SILICON. 3rd International Workshop on Beam Injection Assessment of Defects in Semiconductors (BIADS 93) - A NATO Advanced Research Workshop, 24(1-3), 8–14.

MLA Style

Wilshaw, P, et al. “ELECTRON-BEAM-INDUCED ACTIVITY OF DEFECTS IN SILICON.” 3rd International Workshop on Beam Injection Assessment of Defects in Semiconductors (BIADS 93) - A NATO Advanced Research Workshop, vol. 24, nos. 1-3, 1994, pp. 8–14.

Chicago Style

Wilshaw, P, T Fell, C Amaku, and M Decoteau. 1994. “ELECTRON-BEAM-INDUCED ACTIVITY OF DEFECTS IN SILICON.” In 3rd International Workshop on Beam Injection Assessment of Defects in Semiconductors (BIADS 93) - A NATO Advanced Research Workshop, 24:8–14.
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Publisher copy:: 10.1016/0921-5107(94)90289-5

Authors

+ Wilshaw, P More by this author

Role:: Author

+ Fell, T More by this author

Role:: Author

+ Amaku, C More by this author

Role:: Author

+ Decoteau, M More by this author

Role:: Author

Journal:: MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY More from this journal
Volume:: 24
Issue:: 1-3
Pages:: 8-14
Publication date:: 1994-05-01
Event title:: 3rd International Workshop on Beam Injection Assessment of Defects in Semiconductors (BIADS 93) - A NATO Advanced Research Workshop
DOI:: 10.1016/0921-5107(94)90289-5
ISSN:: 0921-5107

Keywords:: COMPLEX

IRON
Pubs id:: pubs:30312
UUID:: uuid:785691ad-b093-4527-97af-61958d8637e4
Local pid:: pubs:30312
Source identifiers:: 30312
Deposit date:: 2012-12-19
ARK identifier:: ark:/29072/ora_785691adb093452797af61958d8637e4

Terms of use

Copyright date:: 1994

Licence:: Terms and Conditions of Use for Oxford University Research Archive

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